Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Axial SiGe heteronanowire tunneling field-effect transistors.

We present silicon-compatible trigated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high I(ON) ~ 2 μA/μm, fully suppressed ambipolarity, and a subthreshold slope SS ~ 140 mV/decade over 4 decades of current with lowest ...

The Effect of Germanium Fraction on High-Field Band-to-Band Tunneling in p+-SiGe/n+-SiGe Junctions in Forward and Reverse Biases

The dependence of band-to-band tunneling in p+-Si1−xGex /n+-Si1−xGex homojunctions on Ge fraction and electric field is investigated in the range 2–3×108 V/m. Negative differential resistance (NDR) in forward bias is observed for each device with the highest peak tunneling-current density of 8.2 kA/cm2 without any postannealing step. Reverse-biased band-to-band tunneling, as relevant for tunnel...

Band-to-band tunneling in carbon nanotube field-effect transistors.

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate volta...

Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors

Simulation of Phonon-Assisted Band-to Band Tunneling in Carbon Nanotube Field-Effect Transistors